050-5987 rev d 6-2008 maximum ratings all ratings: t c = 25c unless otherwise speci ed. static electrical characteristics rf power mosfets n - channel enhancement mode 250v 150w 65mhz the ARF461A and arf461b comprise a symmetric pair of common drain rf power transistors designed for push- pull scienti c, commercial, medical and industrial rf power ampli er applications up to 65 mhz. they have been optimized for both linear and high ef ciency classes of operation. ? speci ed 250 volt, 40.68 mhz characteristics: ? output power = 150 watts. ? gain = 13db (class ab) ? ef ciency = 75% (class c) ? low cost common source rf package. ? low vth thermal coef cient. ? low thermal resistance. ? optimized soa for superior ruggedness. ? rohs compliant ARF461A(g) arf461b(g) common source microsemi website - http://www.microsemi.com symbol parameter ARF461Ag/bg unit v dss drain-source voltage 1000 v v dgo drain-gate voltage 1000 i d continuous drain current @ t c = 25c 6.5 a v gs gate-source voltage 30 v p d total power dissipation @ t c = 25c 250 w r jc junction to case 0.50 c/w t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature: 0.063? from case for 10 sec. 300 symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 1000 v v ds(on) on state drain voltage 1 (i d(on) = 3.25a, v gs = 10v) 6.5 i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage drain current (v ds = 0.8v dss , v gs = 0, t c = 125c) 250 i gss gate-source leakage current (v ds = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 25v, i d = 3.25a) 3 4 mhos v gs(th) gate threshold voltage (v ds = v gs , i d = 50ma) 3 5 volts caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. t o - 2 4 7
050-5987 rev d 6-2008 30 45 60 75 90 105 120 frequency (mhz) figure 1, typical gain vs frequency class c v dd = 150v p out = 150w 30 25 20 15 10 5 0 gain (db) ARF461A/b 1 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the speci cations and information contained herein. 1 10 100 1000 8 6 4 2 0 0 2 4 6 8 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 5000 1000 500 100 50 10 .1 .5 1 5 10 50 200 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 26 10 5 1 .5 .1 1ms 10ms 100ms dc 100us dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 50v f = 1mhz 1700 pf c oss output capacitance 175 c rss reverse transfer capacitance 50 t d(on) turn-on delay time v gs = 15v v dd = 0.5v dss i d = i d (cont.) @ 25c r g = 1.6 8 ns t r rise time 5 t d(off) turn-off delay time 21 t f fall time 10.1 functional characteristics symbol characteristic test conditions min typ max unit g ps common source ampli er power gain f = 40.68mhz v gs = 0v v dd = 250v p out = 150w 13 15 db drain ef ciency 70 75 % electrical ruggedness vswr 10:1 no degradation in output power
050-5987 rev d 6-2008 t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 25 20 15 10 5 0 1 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) ARF461A/b 5.5v 6v 4v v gs =15, 10, 8 & 6.5v 4.5v 5v table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( 7 ) z ol ( 7 ) 2.0 13.5 27 40 65 20.9 - j 9.2 2.4 - j 6.8 .57 - j 2.6 .31 - j 0.5 .44 + j 1.9 38 - j 2.6 31 - j 14 19.6 - j 17.6 12.5 - j 15.8 6.0 - j 10.5 z in - gate shunted with 25 7 i dq = 100ma z ol - conjugate of optimum load for 150 watts output at v dd = 125v z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration single pulse 0.5 0.1 0.3 0.7 0.9 0.05 0.60 0.50 0.40 0.30 0.20 0.10 0 figure 9a, transient thermal impedance model 0.0284 0.165 0.307 0.00155f 0.00934f 0.128f power (watts) junction temp. ( ?c) rc model case temperature
050-5987 rev d 6-2008 to-247 package outline ARF461A/b l1 c1 r2 r1 dut l2 l3 c3 c4 c7 c6 c2 c8 c9 l4 250v + - rf output rf input c1 -- 1800pf + 1000pf 100v chips mounted at gate lead c2-c5 -- arco 463 mica trimmer c6-c8 -- .1 f 500v ceramic chip c9 -- 2200 pf 500 v chip l1 -- 4t #20 awg .25"id .3 "l ~80nh l2 -- 7t #16 awg .4" id .5"l ~335nh l3 -- 25t #24 awg .25"id ~2.2uh l4 -- vk200-4b ferrite choke 3uh r1-r2 -- 51 ohm 0.5w carbon dut = ARF461A/b 40.68 mhz test circuit + - bias 0 - 12v c5 gate ------- drain source ---- source drain ------- gate device arf- a arf- b source note: these two parts comprise a symmetric pair of rf power transistors and meet the same electrical speci ca- tions. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved.
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